byv(f,b)32-50 thru byv(f,b)32-200 vishay general semiconductor document number: 88558 revision: 05-may-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 dual common-cathode ultrafast rectifier features ? glass passivated chip junction ? ultrafast recovery time ? low switching losses, high efficiency ? low forward voltage drop ? high forward surge capability ? meets msl level 1, per j-std-020, lf maximum peak of 245 c (for to-263ab package) ? solder dip 260 c, 40 s (for to-220ab and ito-220ab package) ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, dc-to-dc converters, and other power switching application. mechanical data case: to-220ab, ito-220ab, to-263ab epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix for consumer grade, meets jesd 201 class 1a whisker test, he3 suffix for high reliability grade (aec q101 qualified), meets jesd 201 class 2 whisker test polarity: as marked mounting torque: 10 in-lbs maximum primary characteristics i f(av) 18 a v rrm 50 v to 200 v i fsm 150 a t rr 25 ns v f 0.85 v t j max. 150 c case pin 2 pin 1 pin 3 to-220ab byv32 series ito-220ab byvb32 series pin 1 pin 2 k heatsink 1 2 3 1 2 k byvf32 series pin 2 pin 1 pin 3 to-263ab 1 2 3 maximum ratings (t c = 25 c unless otherwise noted) parameter symbol byv32-50 byv32-100 byv32-150 byv32-200 unit maximum repetitive peak reverse voltage v rrm 50 100 150 200 v maximum rms voltage v rms 35 70 105 140 v maximum dc blocking voltage v dc 50 100 150 200 v maximum average forward rectified current at t c = 125 c i f(av) 18 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode i fsm 150 a operating storage and temperature range t j , t stg - 65 to + 150 c isolation voltage (ito-220ab only) from terminal to heatsink t = 1 min v ac 1500 v
byv(f,b)32-50 thru byv(f,b)32-200 vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88558 revision: 05-may-08 2 note: (1) pulse test: 300 s pulse width, 1 % duty cycle note: (1) automotive grade aec q101 qualified electrical characteristics (t c = 25 c unless otherwise noted) parameter test conditions symbol byv 32-50 byv32-100 byv32-150 byv32-200 unit maximum instantaneous forward voltage per diode (1) i f = 20 a i f = 5.0 a t j = 25 c t j = 100 c v f 1.15 0.85 v maximum dc reverse current per diode at rated dc blocking voltage t j = 25 c t j = 100 c i r 10 600 a maximum reverse recovery time per diode i f = 1 a, v r = 30 v, di/dt = 100 a/s, i rr = 10 % i rm t rr 25 ns typical junction capacitance per diode 4.0 v, 1 mhz c j 45 pf thermal characteristics (t c = 25 c unless otherwise noted) parameter symbol byv byvf byvb unit typical thermal resistance from junction to case per diode r jc 1.6 5.0 1.6 c/w ordering information (example) package preferred p/n unit weight (g) package code base quantity delivery mode to-220ab byv32-200-e3/45 1.85 45 50/tube tube ito-220ab byvf32-200-e3/45 1.97 45 50/tube tube to-263ab byvb32-200-e3/45 1.35 45 50/tube tube to-263ab byvb32-200-e3/81 1.35 81 800/reel tape and reel to-220ab byv32-200he3/45 (1) 1.85 45 50/tube tube ito-220ab byvf32-200he3/45 (1) 1.97 45 50/tube tube to-263ab byvb32-200he3/45 (1) 1.35 45 50/tube tube to-263ab byvb32-200he3/81 (1) 1.35 81 800/reel tape and reel
byv(f,b)32-50 thru byv(f,b)32-200 vishay general semiconductor document number: 88558 revision: 05-may-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 ratings and characteristics curves (t a = 25 c unless otherwise noted) figure 1. forward current derating curve figure 2. maximum non-repetitive peak forward surge current per diode figure 3. typical instantaneous forw ard characteristics per diode 0 4 16 1 8 20 0 75 25 50 100 125 150 8 a v erage for w ard rectified c u rrent (a) 12 case am b ient temperat u re (c) resisti v e or ind u cti v e load 0 75 100 125 50 25 150 1 100 10 t j = 150 c 10 ms single half sine- w a v e nu m b er of cycles at 50 hz peak for w ard s u rge c u rrent (a) instantaneo u s for w ard c u rrent (a) 100 10 1 0.1 0.01 0.1 0.3 1.1 1.3 0.5 0.7 0.9 instantaneo u s for w ard v oltage ( v ) t j = 125 c t j = 25 c p u lse w idth = 300 s 1 % d u ty cycle figure 4. typical reverse leak age characteristics per diode figure 5. typical juncti on capacitance per diode 0.1 1 10 100 20 0 100 40 60 8 0 1000 percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse leakage c u rrent ( a) t c = 100 c t c = 25 c 1 100 10 0 20 30 40 50 60 10 t j = 25 c f = 1.0 mhz v sig = 5 m v p-p re v erse v oltage ( v ) j u nction capacitance (pf)
byv(f,b)32-50 thru byv(f,b)32-200 vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88558 revision: 05-may-08 4 package outline dimensions in inches (millimeters) to-220ab 0.113 (2. 8 7) 0.103 (2.62) 0.370 (9.40) 0.360 (9.14) 0.415 (10.54) max. 0.635 (16.13) 0.625 (15. 8 7) pi n 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.035 (0.90) 0.02 8 (0.70) 0.154 (3.91) 0.14 8 (3.74) 1 3 2 0.1 8 5 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.6 8 ) 0.135 (3.43) 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) 1.14 8 (29.16) 1.11 8 (2 8 .40) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.603 (15.32) 0.573 (14.55) ito-220ab 0.076 (1.93) ref. 45 ref. pi n 3 2 1 0.404 (10.26) 0.3 8 4 (9.75) 0.076 (1.93) ref. 0.600 (15.24) 0.5 8 0 (14.73) 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.057 (1.45) 0.045 (1.14) 0.191 (4. 8 5) 0.171 (4.35) 0.671 (17.04) 0.651 (16.54) 0.035 (0. 8 9) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.025 (0.64) 0.015 (0.3 8 ) 0.105 (2.67) 0.095 (2.41) 0.02 8 (0.71) 0.020 (0.51) 0.110 (2.79) 0.100 (2.54) 7 ref. 0.135 (3.43) dia. 0.122 (3.0 8 ) dia. 0.110 (2.79) 0.100 (2.54) 0.190 (4. 8 3) 0.170 (4.32) 7 ref. 7 ref. 0.140 (3.56) dia. 0.125 (3.17) dia. 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) to-263ab mo u nting pad layo u t 0.670 (17.02) 0.591 (15.00) 0.105 (2.67) 0.095 (2.41) 0.0 8 (2.032) mi n . 0.15 (3. 8 1) mi n . 0.33 ( 8 .3 8 ) mi n . 0.42 (10.66) mi n . 12 k k 0.140 (3.56) 0.110 (2.79) 0.021 (0.53) 0.014 (0.36) 0.110 (2.79) 0.090 (2.29) 0 to 0.01 (0 to 0.254) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.190 (4. 8 3) 0.160 (4.06) 0.205 (5.20) 0.195 (4.95) 0.624 (15. 8 5) 0.591 (15.00) 0.037 (0.940) 0.027 (0.6 8 6) 0.105 (2.67) 0.095 (2.41) 0.360 (9.14) 0.320 ( 8 .13) 0.411 (10.45) 0.3 8 0 (9.65) 0.245 (6.22) mi n .
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